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November 2013
FDD3N40 / FDU3N40
N-Channel UniFET TM MOSFET
400 V, 2 A, 3.4 Ω
Features
? R DS(on) = 3.4 Ω (Typ.) @ V GS = 10 V, I D = 1 A
? Low Gate Charge (Typ. 4.5 nC)
? Low C rss (Typ. 3.7 pF)
? 100% Avalanche Tested
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? LED TV
? Consumer Appliances
? Lighting
? Uninterruptible Power Supply
D
D
G
S
D-PAK
G
D
S
I-PAK
G
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FDD3N40TM / FDU3N40TU
400
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
2.0
1.25
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
8.0
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
46
2
3
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
30
0.24
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD3N40TM / FDU3N40TU
4.2
110
Unit
° C/W
° C/W
?2007 Fairchild Semiconductor Corporation
FDD3N40 / FDU3N40 Rev. C3
1
www.fairchildsemi.com
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